features n dual side mounting n electrically identical to jedec 1n4148 n 350 mw power dissipation mechanical dimensions n industry standard 1206 package/footprint n internal solder construction no intermittent contacts maximum ratings peak reverse voltage...v rm rms reverse voltage...v r(rms) CD4148 data sheet CD4148 units CD4148 100 75 volts volts peak forward current...i f peak forward surge current...i fsm power dissipation...p d operating temperature...t j storage temperature range...t strg maximum forward voltage...v f @ i f = 10 ma maximum dc reverse current...i r @ v r = 75v maximum diode capacitance...c d maximum reverse recovery time...t rr ............................................. 200 ............................................... ............................................. 2000 ............................................... ............................................. 350 ............................................... ............................................. 175 ............................................... mamps mamps mw c c volts m amps pf ns ..................................... -55 to 150 ...................................... ............................................. 1.0 ............................................... ............................................. 5.0 ............................................... ............................................. 4 ............................................... ............................................. 4 ............................................... leadless chip signal diode high speed switching electrical characteristics p vv = 100ns 50 ohms 5k ohms r g = 50 ohms .01 uf i f output trr i r 0.1 i r device under t device under t device under t device under t device under t est est est est est page 10-16
data sheet CD4148 page 10-17 ratings at 25 deg. c ambient temperature unless otherwise specified. single phase half wave, 60 hz resistive or inductive load. for capacitive load, derate current by 20%. leadless chip signal diode high speed switching relative capacitance versus reverse voltage 0.7 0.8 0.9 1 1.1 0246810 v r (v) c tot (vr)/c tot (0v) tj = 25c f = 1mhz forward characteristics 0.01 0.1 1 10 100 1000 012 v f i f dynamic forward resistance versus forward current 1 10 100 1000 10000 0.01 0.1 1 10 100 i f (ma) r d ( w ) admissable power dissipation versus ambient temperature valid provided that leads at a distance of 8mm from case are kept at ambient temperature 0 100 200 300 400 500 600 700 800 0 50 100 150 200 t amb ( o c) p tot (mw) leakage current versus junction temperature 1 10 100 1000 10000 0100200 t j ( o c) i r (na) admissable repetitive peak forward current versus pulse duration valid provided that leads at a distance of 8mm from case are kept at ambient temperature 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 t p (s) i frm (a)
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